US Patent Issued to Western Digital Technologies on July 14 for "Buffer layers, interlayers, and barrier layers comprising Heusler alloys for SOT based sensor, memory, and storage devices" (American, Japanese Inventors)

Posted On: 2026-07-14

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,028, issued on July 14, was assigned to Western Digital Technologies Inc. (San Jose, Calif.). "Buffer layers, interlayers, and barrier laye... Read More

US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Magnetic memory device with diffusion barrier" (South Korean Inventors)

Posted On: 2026-07-14

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,030, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Magnetic memory device with diffusion barrie... Read More

US Patent Issued to MELEXIS TECHNOLOGIES on July 14 for "Magnetic sensor device, and method of producing same" (Belgian Inventor)

Posted On: 2026-07-14

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,031, issued on July 14, was assigned to MELEXIS TECHNOLOGIES SA (Bevaix, Switzerland). "Magnetic sensor device, and method of producing sam... Read More

US Patent Issued to PSIQUANTUM on July 14 for "Method of making a superconducting nanowire single photon detector using a sidewall image transfer process" (New York, California Inventors)

Posted On: 2026-07-14

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,032, issued on July 14, was assigned to PSIQUANTUM CORP. (Palo Alto, Calif.). "Method of making a superconducting nanowire single photon de... Read More

US Patent Issued to NEC on July 14 for "Superconducting quantum circuit" (Japanese Inventors)

Posted On: 2026-07-14

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,033, issued on July 14, was assigned to NEC Corp. (Tokyo). "Superconducting quantum circuit" was invented by Ryoji Miyazaki (Tokyo), Aiko Y... Read More

US Patent Issued to University of Kansas on July 14 for "Atomically tuned ultrathin memristors" (Kansas Inventors)

Posted On: 2026-07-14

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,034, issued on July 14, was assigned to University of Kansas (Lawrence, Kan.). "Atomically tuned ultrathin memristors" was invented by Judy... Read More

US Patent Issued to Korea Advanced Institute of Science and Technology, Research & Business Foundation Sungkyunkwan University on July 14 for "Synaptic device, reservoir computing device including the synaptic device, and reservoir computing method using the computing device" (South Korean, Chinese Inventors)

Posted On: 2026-07-14

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,035, issued on July 14, was assigned to Korea Advanced Institute of Science and Technology (Daejeon, South Korea) and Research & Business Fo... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Phase change material radio-frequency switch for low power consumption and methods for forming the same" (Taiwanese Inventors)

Posted On: 2026-07-14

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,036, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Phase change material radio-frequen... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Phase change material switch with improved thermal dissipation and methods for forming the same" (Taiwanese Inventors)

Posted On: 2026-07-14

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,037, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Phase change material switch with i... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Phase-change random access memory device and method of forming the same" (Taiwanese Inventors)

Posted On: 2026-07-14

Government News US Fed News Patentwipo

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,038, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Phase-change random access memo... Read More

Exclusive

Category

Source

Publication

Byline

Location

US Patent Issued to Western Digital Technologies on July 14 for "Buffer layers, interlayers, and barrier layers comprising Heusler alloys for SOT based sensor, memory, and storage devices" (American, Japanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Magnetic memory device with diffusion barrier" (South Korean Inventors)

US Patent Issued to MELEXIS TECHNOLOGIES on July 14 for "Magnetic sensor device, and method of producing same" (Belgian Inventor)

US Patent Issued to PSIQUANTUM on July 14 for "Method of making a superconducting nanowire single photon detector using a sidewall image transfer process" (New York, California Inventors)

US Patent Issued to NEC on July 14 for "Superconducting quantum circuit" (Japanese Inventors)

US Patent Issued to University of Kansas on July 14 for "Atomically tuned ultrathin memristors" (Kansas Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Phase change material radio-frequency switch for low power consumption and methods for forming the same" (Taiwanese Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Phase change material switch with improved thermal dissipation and methods for forming the same" (Taiwanese Inventors)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Phase-change random access memory device and method of forming the same" (Taiwanese Inventors)